From the mid-1950s to the late 1970s, the development of power electronics technology based on high-power silicon diodes, bipolar power transistors, and thyristor applications (especially thyristors) was relatively mature. Since the late 1970s, two developments have had a huge impact on power electronics technology. The development of microcomputers has played a significant role in the control system, fault detection, and information processing of power electronic devices, and will continue to develop in the future; The second is the penetration of microelectronics technology, fiber optic technology, and other technologies into power electronic devices, developing more new generation power electronic devices. Except for ordinary thyristors developing towards larger capacities (6500 volts, 3500 amperes), gate turnable thyristors (GTOs) have a voltage of 4500 volts and a current of 2500-3000 amperes; Bipolar transistors are also developing towards larger capacities. In the mid to late 1980s, their industrial products had a maximum voltage of 1400 volts, a maximum current of 400 amperes, and a much higher operating frequency than thyristors. When using the Darlington structure, the current gain can reach 75-200. With the development of fiber optic technology, the United States and Japan successively developed optical controlled thyristors and used them in DC transmission systems from 1981 to 1982. Compared with electrically triggered thyristors, this type of optoelectronic transistor simplifies the triggering circuit, improves insulation level and anti-interference ability, and can promote the development of small and lightweight converter equipment, reducing cost and improving operational reliability. At the same time, field controlled power electronic devices have also been developed, such as power field-effect transistors (MOSFETs) and power electrostatic induction transistors (SITs), which have reached voltage and current levels of kilovolts and tens to hundreds of amperes. The operating frequency of small and medium-sized capacity can reach megahertz level. The new generation of power electronic devices, such as insulated gate bipolar transistors (IGTs or IGBTs) and MOS controlled thyristors (MCTs), which are synthesized by field control and bipolar technology, are also emerging with considerable capacity. These new devices all have gate turn off capability, and their operating frequency can be greatly increased, making power electronic circuits simpler and continuously improving various indicators such as volume, weight, efficiency, and performance of power electronic devices. It will bring power electronic technology to a new stage of development. At the same time, computer simulation and simulation technologies for power electronic devices, power electronic circuits, and power electronic devices are also constantly developing.